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Samsung to license ST 28 nm FD-SOI process technology

The FD-SOI 28 nm node process developed at ST Crolles has been licensed to foundry partner Samsung - well done to the guys in Crolles!

Is this process the solution to the current yield problems associated with the more complex Fin-FET?  Please have your say here ... any comments welcome!



1 person has had something to say so far

I would argue that the FD-SOI process is much more suitable for low-power IC applications such as for mobile & consumer chips. Fin-FET processes will probably only be usefully employed (at most likely comparatively lower yields & thus higher costs) in high-end server IC applications. What do you think?
Posted on 14/05/14 17:21.

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